Designing and controlling the metrological parameters of photoelectric transducers based on semiconductors with multiply-charged dopants

The initial data for designing the metrological parameters of photoelectric semiconductor transducers (PST) based on semiconductors with deep multiply‐charged dopants are obtained. The ranges of correspondence between the energy characteristic of PST with multiply‐charged dopants and the linear operation mode are studied. It is demonstrated that an appropriate choice of a deep multiply‐charged dopant enables designing an PST with a given pass band, an improved signal/noise ratio and a higher operating temperature. Moreover, it is shown that combining control and measuring optical channels in a single photodetector allows for implementing the control method for the PST spectral sensitivity during operation.